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| Item number: 2794E-2144469 Manufacturer no.: IRL520NSTRLPBF EAN/GTIN: n/a |
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| This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides reliable and efficient deviceIt is fully avalanche rated More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 10 A | Maximum Drain Source Voltage: | 100 V | Package Type: | D2PAK (TO-263) | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.18 Ω | Maximum Gate Threshold Voltage: | 2V | Number of Elements per Chip: | 1 |
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| Other search terms: power mosfet, 2144469, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRL520NSTRLPBF |
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