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| Item number:
2794E-2144456 Manufacturer no.:
IRFR3710ZTRLPBF EAN/GTIN:
n/a |
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| This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .Its design is extremely efficient and reliable More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 56 A | Maximum Drain Source Voltage: | 100 V | Package Type: | DPAK (TO-252) | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.018 Ω | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 |
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| Other search terms: 2144456, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRFR3710ZTRLPBF |
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