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| Item number:
2794E-2104975 Manufacturer no.:
SiHB186N60EF-GE3 EAN/GTIN:
n/a |
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| The Vishay EF Series Power MOSFET With Fast Body Diode has D2PAK (TO-263) package type.4th generation E series technology Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) Reduced switching and conduction losses Avalanche energy rated (UIS) More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 8.4 A | Maximum Drain Source Voltage: | 600 V | Package Type: | D2PAK (TO-263) | Series: | EF | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.168 Ω | Maximum Gate Threshold Voltage: | 3 → 5V | Number of Elements per Chip: | 1 |
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