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| Item number:
2794E-2098113 Manufacturer no.:
VS-C08ET07T-M3 EAN/GTIN:
n/a |
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| The Vishay 650 V Power SiC Merged PIN Schottky Diode with forward Current of 8A.Majority carrier diode using Schottky technology on SiC wide band gap material Positive VF temperature coefficient for easy paralleling Virtually no recovery tail and no switching losses Temperature invariant switching behaviour 175 °C maximum operating junction temperature MPS structure for high ruggedness to forward current surge events More information: | | Mounting Type: | Through Hole | Package Type: | 2L TO-220AC | Maximum Continuous Forward Current: | 8A | Peak Reverse Repetitive Voltage: | 650V | Diode Configuration: | Single | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 3 | Diode Technology: | SiC Schottky |
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| Other search terms: 2098113, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, Vishay, VSC08ET07TM3 |
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