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STMicroelectronics STGWA20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247 / 2067209


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Product information
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Item number:
     2794E-2067209
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     STGWA20H65DFB2
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
The STMicroelectronics Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO-247 long leads package.Maximum junction temperature : TJ = 175 °C Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient
More information:
Maximum Continuous Collector Current:
40 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
147 W
Number of Transistors:
1
Package Type:
TO-247
Pin Count:
3
Transistor Configuration:
Single
Other search terms: Transistor, Transistors, 2067209, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWA20H65DFB2
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