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| Item number:
2794E-2049870 Manufacturer no.:
STGB50H65FB2 EAN/GTIN:
n/a |
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| The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.Maximum junction temperature: TJ = 175 °C Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A Minimized tail current Tight parameter distribution Low thermal resistance More information: | | Maximum Continuous Collector Current: | 86 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 272 W | Number of Transistors: | 1 | Package Type: | D2PAK (TO-263) | Pin Count: | 3 |
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| Other search terms: 2049870, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGB50H65FB2 |
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