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| Item number:
2794E-2047201 Manufacturer no.:
SIHA105N60EF-GE3 EAN/GTIN:
n/a |
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| The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er) More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 29 A | Maximum Drain Source Voltage: | 600 V | Package Type: | TO-220 FP | Series: | SiHA105N60EF | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.102 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Number of Elements per Chip: | 1 |
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| Other search terms: 2047201, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHA105N60EFGE3 |
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