| |
|
| Item number: 2794E-2033483 Manufacturer no.: STPSC10H065DLF EAN/GTIN: n/a |
| |
|
| | |
| The STMicroelectronics SiC diode is an ultra-high performance power Schottky diode, manufactured using a silicon carbide substrate. It has a wide band gap material that allows the design of a Schottky diode structure with a 650 V rating. No recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature, due to the schottky construction.Less than 1 mm height package High creep age package No or negligible reverse recovery Temperature independent switching behaviour High forward surge capability Very low drop forward voltage Power efficient product ECOPACK2 compliant component More information: | | Mounting Type: | Surface Mount | Package Type: | PowerFLAT | Maximum Continuous Forward Current: | 10A | Peak Reverse Repetitive Voltage: | 650V | Diode Configuration: | Single | Pin Count: | 2 | Number of Elements per Chip: | 1 |
|
| | |
| | | |
| Other search terms: Schottky diodes, 2033483, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, STMicroelectronics, STPSC10H065DLF |
| | |
| |