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| Item number:
2794E-2025680 Manufacturer no.:
NXH35C120L2C2ESG EAN/GTIN:
n/a |
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| The ON Semiconductor transfer molded power module with low thermal resistance substrate containing a converter-inverter-brake circuit consisting of six 35 Ampere and 1600 Volts rectifiers, six 35 Ampere and 1200 Volts IGBTs with inverse diodes, one 35 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.Low thermal resistance 6mm clearance distance between pin to heatsink Solderable pins Thermistor Pb free Halogen free or BFR free RoHS compliant More information: | | Maximum Continuous Collector Current: | 35 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20.0V | Number of Transistors: | 6 | Configuration: | 3 Phase | Package Type: | DIP26 | Mounting Type: | Through Hole | Channel Type: | N |
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| Other search terms: 2025680, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, NXH35C120L2C2ESG |
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