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SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin TO-220FP STMicroelectronics STP33N60DM6 / 2025529


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Product information
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Product Image
Item number:
     2794E-2025529
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     STP33N60DM6
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
Power transistor
power transistor
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.100% avalanche tested Zener-protected
More information:
Channel Type:
N
Maximum Continuous Drain Current:
25 A
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220FP
Series:
ST
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.115 Ω
Channel Mode:
Depletion
Maximum Gate Threshold Voltage:
4.75V
Number of Elements per Chip:
1
Transistor Material:
SiC
Other search terms: 2025529, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, STP33N60DM6
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