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| Item number:
2794E-2025487 Manufacturer no.:
SCTW35N65G2VAG EAN/GTIN:
n/a |
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| The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.Very fast and robust intrinsic body diode Low capacitance More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 45 A | Maximum Drain Source Voltage: | 650 V | Package Type: | HiP247 | Series: | SCT | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.055 Ω | Channel Mode: | Depletion | Maximum Gate Threshold Voltage: | 5V | Number of Elements per Chip: | 1 | Transistor Material: | SiC |
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| Other search terms: 2025487, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, SCTW35N65G2VAG |
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