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| Item number:
2794E-2010859 Manufacturer no.:
SCTW35N65G2V EAN/GTIN:
n/a |
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| The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.Very fast and robust intrinsic body diode Low capacitance More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 45 A | Maximum Drain Source Voltage: | 650 V | Package Type: | HiP247 | Series: | SCTW35 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.045 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Number of Elements per Chip: | 1 | Transistor Material: | SiC |
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| Other search terms: 2010859, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, SCTW35N65G2V |
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