Product range
United Kingdom
English
My Mercateo
Sign in / Register		Basket
 		 
 >  >  >  >  >  > Item

N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK Vishay SIHU6N80AE-GE3 / 2006869


Quantity:  pieces  
Product information
Product Image
Product Image
Item number:
     2794E-2006869
Manufacturer:
     Vishay
Manufacturer no.:
     SIHU6N80AE-GE3
EAN/GTIN:
     n/a
Search terms:
MOSFET
MOSFET transistor
mosfet transistor
Channel Type = N
Maximum Continuous Drain Current = 3.2 A, 5 A
Maximum Drain Source Voltage = 850 V
Series = E
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 0.95 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4V
Number of Elements per Chip = 1
More information:
Channel Type:
N
Maximum Continuous Drain Current:
3.2 A, 5 A
Maximum Drain Source Voltage:
850 V
Package Type:
IPAK (TO-251)
Series:
E
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.95 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Other search terms: 2006869, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHU6N80AEGE3
An overview of the conditions1
Delivery period
Stock level
Price
from £ 0.565*
  
Price is valid from 625 pieces
Orders only in multiples of 25 pieces
Select conditions yourself
Share itemAdd item to shopping list
Staggered prices
Order quantity
Net
Gross
Unit
from 25 pieces
£ 1.087*
£ 1.304
per piece
from 50 pieces
£ 0.827*
£ 0.992
per piece
from 125 pieces
£ 0.762*
£ 0.914
per piece
from 250 pieces
£ 0.598*
£ 0.718
per piece
from 625 pieces
£ 0.565*
£ 0.678
per piece
* Prices with asterisk are net prices excl. statutory VAT.
Our offer is only aimed at companies, public institutions and freelancers.