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N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin DPAK Vishay SIHD6N80AE-GE3 / 2006867


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Product information
Product Image
Product Image
Item number:
     2794E-2006867
Manufacturer:
     Vishay
Manufacturer no.:
     SIHD6N80AE-GE3
EAN/GTIN:
     n/a
Search terms:
2006867
Semiconductors
Discrete Semiconductors
MOSFETs
Channel Type = N
Maximum Continuous Drain Current = 3.2 A, 5 A
Maximum Drain Source Voltage = 850 V
Series = E
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 0.95 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4V
Number of Elements per Chip = 1
More information:
Channel Type:
N
Maximum Continuous Drain Current:
3.2 A, 5 A
Maximum Drain Source Voltage:
850 V
Package Type:
DPAK (TO-252)
Series:
E
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.95 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Other search terms: Vishay, SIHD6N80AEGE3
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