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N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB Vishay SiHP105N60EF-GE3 / 2006795


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Product information
Product Image
Product Image
Item number:
     2794E-2006795
Manufacturer:
     Vishay
Manufacturer no.:
     SiHP105N60EF-GE3
EAN/GTIN:
     n/a
Search terms:
MOSFET
MOSFET transistor
Channel Type = N
Maximum Continuous Drain Current = 29 A
Maximum Drain Source Voltage = 650 V
Series = EF
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 0.088 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 5V
Number of Elements per Chip = 1
More information:
Channel Type:
N
Maximum Continuous Drain Current:
29 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-220AB
Series:
EF
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.088 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Number of Elements per Chip:
1
Other search terms: 2006795, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiHP105N60EFGE3
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