STMicroelectronics Demonstration Board for L6491 for IGBTs, N-Channel Power MOSFETs / 1961707

The L6491 is a high voltage device manufactured with the BCD6 “;OFF-LINE”; technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs, with a 4 A sink and source current capability. The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing a microcontroller or DSP. An integrated comparator is available for fast overcurrent protection, and is also suited for other functions such overtemperature, etc. The EVAL6491HB board allows evaluating all of the L6491 features while driving a power switch with voltage rating up to 600 V in TO-220 or TO-247 packages. The board allows easily selecting and modifying the values of relevant external components in order to ease drivers performance evaluation under different applicative conditions and fine pre-tuning of final applications components.