|  |
| |
| Item number:
2794E-1958856 Manufacturer no.:
FFSB0865B-F085 EAN/GTIN:
n/a |
| |
|
| | |
| Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.Max Junction Temperature 175 °C High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery PPAP capable Applications Automotive HEV-EV Onboard Chargers Automotive HEV-EV DC-DC Converters More information: | | Mounting Type: | Surface Mount | Package Type: | D2PAK | Maximum Continuous Forward Current: | 10.1A | Peak Reverse Repetitive Voltage: | 650V | Diode Configuration: | Single | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 2+Tab | Maximum Forward Voltage Drop: | 2.4V | Number of Elements per Chip: | 1 | Diode Technology: | SiC Schottky | Maximum Forward Current: | 10.1A |
|
| | |
| | | |
| Other search terms: 1958856, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, onsemi, FFSB0865BF085 |
| | |
| |