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| Item number:
2794E-1924659 Manufacturer no.:
STL45N60DM6 EAN/GTIN:
n/a |
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| This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance Extremely high dv/dt ruggedness Zener-protected More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 25 A | Maximum Drain Source Voltage: | 600 V | Package Type: | PowerFLAT 8 x 8 HV | Mounting Type: | Surface Mount | Pin Count: | 5 | Maximum Drain Source Resistance: | 110 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.75V | Minimum Gate Threshold Voltage: | 3.25V | Maximum Power Dissipation: | 160 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±25 V | Length: | 8.1mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: MOSFET transistor, SMD transistor, SMD transistors, Transistor, Transistors, smd transistor, 1924659, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, STL45N60DM6 |
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