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SiC N-Channel MOSFET, 70 A, 650 V, 4-Pin TO-247-4 ROHM SCT3030ARC14 / 1918787


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Product information
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Item number:
     2794E-1918787
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     SCT3030ARC14
EAN/GTIN:
     5059045403074
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
SCT3030AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver source terminal is improving high-speed switching performance.Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating High efficiency 4pin package Evaluation board P02SCT3040KR-EVK-001 Application Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives
More information:
Channel Type:
N
Maximum Continuous Drain Current:
70 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-247-4
Mounting Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance:
39 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5.6V
Minimum Gate Threshold Voltage:
2.7V
Maximum Power Dissipation:
262 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
22 V
Maximum Operating Temperature:
+175 °C
Number of Elements per Chip:
1
Other search terms: 1918787, Semiconductors, Discrete Semiconductors, MOSFETs, ROHM, SCT3030ARC14
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