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| Item number:
2794E-1888497 Manufacturer no.:
STB13007DT4 EAN/GTIN:
5059045839835 |
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| The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.Fully characterized at 125 ˚C Very high switching speed Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range Integrated free-wheeling diode High voltage capability Minimum lot-to-lot spread for reliable operation Large RBSOA Low spread of dynamic parameters Applications Electronic transformers for halogen lamps Switch mode power supplies More information: | | Transistor Type: | NPN | Maximum DC Collector Current: | 16 A | Maximum Collector Emitter Voltage: | 700 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 80 W | Minimum DC Current Gain: | 8 | Transistor Configuration: | Single | Maximum Emitter Base Voltage: | 9 V | Pin Count: | 3 | Number of Elements per Chip: | 1 | Dimensions: | 10.4 x 9.35 x 4.37mm | Maximum Operating Temperature: | +150 °C |
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