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| Item number:
2794E-1888285 Manufacturer no.:
STD11N60DM2 EAN/GTIN:
n/a |
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| This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance Extremely high dv/dt ruggedness Zener-protected Applications Switching applications More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 10 A | Package Type: | DPAK (TO-252) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 420 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 4V | Maximum Power Dissipation: | 110 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±25 V | Length: | 6.6mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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