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| Item number:
2794E-1888269 Manufacturer no.:
BUL1102EFP EAN/GTIN:
n/a |
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| This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.High voltage capability Very high switching speed Applications Four lamp electronic ballast for: 120 V mains in push-pull configuration 277 V mains in half bridge current feed configuration More information: | | Transistor Type: | NPN | Maximum DC Collector Current: | 8 A | Maximum Collector Emitter Voltage: | 450 V | Package Type: | TO-220FP | Mounting Type: | Through Hole | Maximum Power Dissipation: | 70 W | Transistor Configuration: | Single | Maximum Emitter Base Voltage: | 12 V | Pin Count: | 3 | Number of Elements per Chip: | 1 | Dimensions: | 10.4 x 4.6 x 16.4mm | Maximum Operating Temperature: | +150 °C | Maximum Collector Emitter Saturation Voltage: | 1.5 V |
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| Other search terms: power transistor, 1888269, Semiconductors, Discrete Semiconductors, Bipolar Transistors, STMicroelectronics, BUL1102EFP |
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