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| Item number:
2794E-1885424 Manufacturer no.:
FM25VN10-G EAN/GTIN:
n/a |
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| FRAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption More information: | | Memory Size: | 1Mbit | Organisation: | 128k x 8 bit | Interface Type: | SPI | Data Bus Width: | 8bit | Maximum Random Access Time: | 18ns | Mounting Type: | Surface Mount | Package Type: | SOIC | Pin Count: | 8 | Dimensions: | 4.97 x 3.98 x 1.48mm | Length: | 4.97mm | Maximum Operating Supply Voltage: | 3.6 V | Width: | 3.98mm | Height: | 1.48mm | Maximum Operating Temperature: | +85 °C | Automotive Standard: | AEC-Q100 |
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| Other search terms: 1885424, Semiconductors, Memory Chips, FRAM Memory, Infineon, FM25VN10G |
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