|  |
| |
| Item number:
2794E-1885394 Manufacturer no.:
FM18W08-SG EAN/GTIN:
n/a |
| |
|
| | |
| FRAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption More information: | | Memory Size: | 256kbit | Organisation: | 32K x 8 bit | Interface Type: | Parallel | Data Bus Width: | 8bit | Maximum Random Access Time: | 70ns | Mounting Type: | Surface Mount | Package Type: | SOIC | Pin Count: | 28 | Dimensions: | 18.11 x 7.62 x 2.37mm | Length: | 18.11mm | Maximum Operating Supply Voltage: | 5.5 V | Width: | 7.62mm | Height: | 2.37mm | Maximum Operating Temperature: | +85 °C | Automotive Standard: | AEC-Q100 |
|
| | |
| | | |
| | | |
| |