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| Item number:
2794E-1885097 Manufacturer no.:
SIRA99DP-T1-GE3 EAN/GTIN:
5059045376194 |
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| P-Channel 30 V (D-S) MOSFET.TrenchFET® Gen IV p-channel power MOSFET Very low RDS(on) minimizes voltage drop and reduces conduction loss Eliminates the need for charge pump More information: | | Channel Type: | P | Maximum Continuous Drain Current: | 195 A | Maximum Drain Source Voltage: | 30 V | Package Type: | PowerPAK SO-8 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 2.6 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 104 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +16 V | Length: | 5.99mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 1885097, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIRA99DPT1GE3 |
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