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| Item number: 2794E-1884915 Manufacturer no.: SQJ208EP-T1_GE3 EAN/GTIN: n/a |
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| Channel Type = N Maximum Continuous Drain Current = 20 A, 60 A Maximum Drain Source Voltage = 40 (Channel 1) V, 40 (Channel 2) V Package Type = PowerPAK SO-8L Dual Mounting Type = Surface Mount Pin Count = 6 Maximum Drain Source Resistance = 0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.3 (Channel 1) V, 2.4 (Channel 2) V Minimum Gate Threshold Voltage = 1.3 (Channel 1) V, 1.4 (Channel 2) V Maximum Power Dissipation = 27 W, 48 W Transistor Configuration = Dual Maximum Gate Source Voltage = ±20 V Width = 4.47mm Height = 1.01mm More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 20 A, 60 A | Maximum Drain Source Voltage: | 40 (Channel 1) V, 40 (Channel 2) V | Package Type: | PowerPAK SO-8L Dual | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Drain Source Resistance: | 0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.3 (Channel 1) V, 2.4 (Channel 2) V | Minimum Gate Threshold Voltage: | 1.3 (Channel 1) V, 1.4 (Channel 2) V | Maximum Power Dissipation: | 27 W, 48 W | Transistor Configuration: | Dual | Maximum Gate Source Voltage: | ±20 V | Length: | 5mm | Maximum Operating Temperature: | +175 °C |
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| Other search terms: 1884915, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SQJ208EPT1_GE3 |
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