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| Item number: 2794E-1884872 Manufacturer no.: SIHB22N60EF-GE3 EAN/GTIN: n/a |
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| EF Series Power MOSFET With Fast Body Diode.Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 19 A | Maximum Drain Source Voltage: | 600 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 182 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 179 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 10.41mm | Maximum Operating Temperature: | +150 °C |
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