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| Item number:
2794E-1882878 Manufacturer no.:
W29N04GVBIAF EAN/GTIN:
5059045841753 |
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| Density : 4Gbit (Single chip solution) Vcc : 2.7V to 3.6V Bus width : x8 Operating temperature Industrial: -40°C to 85°C Single-Level Cell (SLC) technology. Organization Density: 4G-bit/512M-byte Page size 2,112 bytes (2048 + 64 bytes) Block size 64 pages (128K + 4K bytes) Highest Performance Read performance (Max.) Random read: 25us Sequential read cycle: 25ns Write Erase performance Page program time: 250us(typ.) Block erase time: 2ms(typ.) Endurance 100,000 Erase/Program Cycles(1) 10-years data retention Command set Standard NAND command set Additional command support Sequential Cache Read Random Cache Read Cache Program Copy Back Two-plane operation Contact Winbond for OTP feature Contact Winbond for Block Lock feature Lowest power consumption Read: 25mA(typ.) Program/Erase: 25mA(typ.) CMOS standby: 10uA(typ.) Space Efficient Packaging 48-pin standard TSOP1 63-ball VFBGA4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.Bus Width: x8 Random Read: 25us Page Program Time: 250us(typ.) Block Erase Time: 2ms(typ.) Support OTP Memory Area More information: | | Memory Size: | 4Gbit | Interface Type: | Parallel | Package Type: | VFBGA | Pin Count: | 63 | Organisation: | 512M x 8 bit | Mounting Type: | Surface Mount | Cell Type: | SLC NAND | Minimum Operating Supply Voltage: | 2.7 V | Maximum Operating Supply Voltage: | 3.6 V | Length: | 11.1mm | Height: | 0.6mm | Width: | 9.1mm | Dimensions: | 11.1 x 9.1 x 0.6mm | Maximum Operating Temperature: | +85 °C | Maximum Random Access Time: | 25µs |
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| Other search terms: 1882878, Semiconductors, Memory Chips, Flash Memory, Winbond, W29N04GVBIAF |
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