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| Item number:
2794E-1868997 Manufacturer no.:
FDC3601N EAN/GTIN:
5059045766643 |
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| These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.1.0 A, 100 V RDS(on) = 500 mΩ@ VGS = 10 V RDS(on) = 550 mΩ @ VGS = 6 V Low gate charge (3.7nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick) Applications This product is general usage and suitable for many different applications. More information: | | Package Type: | TSOT-23 | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Power Dissipation: | 960 mW | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 | Length: | 3mm | Minimum Operating Temperature: | -55 °C | Width: | 1.7mm |
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| Other search terms: MOSFET transistor, SMD transistor, SMD transistors, Transistor, Transistors, smd transistor, 1868997, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDC3601N |
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