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| Item number: 2794E-1867670 Manufacturer no.: MBR1100G EAN/GTIN: 5059045731450 |
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| The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifiers state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature High Surge Capacity Mechanical Characteristics: Case: Epoxy, Moulded Weight: 0.4 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily solder able Lead Temperature for Soldering Purposes: 260°C Max. For 10 Seconds Shipped in plastic bags, 1000 per bag Polarity: Cathode Indicated by Polarity Band Marking: B1100 These are Pb-Free Devices More information: | | Mounting Type: | Through Hole | Package Type: | DO-41 | Maximum Continuous Forward Current: | 2A | Peak Reverse Repetitive Voltage: | 100V | Diode Configuration: | Single | Rectifier Type: | Schottky Rectifier | Diode Type: | Schottky | Pin Count: | 2 | Number of Elements per Chip: | 1 | Diode Technology: | Schottky Barrier | Diameter: | 2.7mm | Peak Non-Repetitive Forward Surge Current: | 50A |
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| Other search terms: 1867670, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, onsemi, MBR1100G |
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