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| Item number:
2794E-1867261 Manufacturer no.:
FOD8342R2 EAN/GTIN:
n/a |
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| FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation 3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail 20 kV/μs Minimum Common Mode Rejection Wide Supply Voltage Range: 10 V to 30 V Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width DistortionUnder-Voltage Lockout (UVLO) with Hysteresis Extended Industrial Temperate Range: -40°C to 100°C Applications AC and Brushless DC Motor Drives Industrial Inverter Uninterruptible Power Supply Induction Heating Isolated IGBT/Power MOSFET Gate Drive More information: | | Mounting Type: | Surface Mount | Output Device: | IGBT, MOSFET | Maximum Forward Voltage: | 1.8V | Number of Channels: | 1 | Number of Pins: | 6 | Package Type: | SOIC | Typical Rise Time: | 38ns | Maximum Input Current: | 10 mA | Isolation Voltage: | 5 kVrms | Logic Output: | Yes | Typical Fall Time: | 24ns | Series: | FOD |
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| Other search terms: mosfet transistor, 1867261, Displays & Optoelectronics, Optocouplers & Photodetectors, Optocouplers, onsemi, FOD8342R2 |
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