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| Item number: 2794E-1867183 Manufacturer no.: MUN5212DW1T1G EAN/GTIN: n/a |
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| This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.Simplifies Circuit Design Reduces Board Space Reduces Component Count NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable These Devices are Pb-Free, Halogen Free/BFR Free More information: | | Transistor Type: | NPN | Maximum DC Collector Current: | 100 mA | Maximum Collector Emitter Voltage: | 50 V | Package Type: | SOT-363 | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 385 mW | Transistor Configuration: | Dual | Pin Count: | 6 | Number of Elements per Chip: | 2 | Base-Emitter Resistor: | 22kΩ | Dimensions: | 2.2 x 1.35 x 1mm | Maximum Operating Temperature: | +150 °C | Typical Input Resistor: | 22 kΩ | Typical Resistor Ratio: | 1 | Automotive Standard: | AEC-Q101 |
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| Other search terms: 1867183, Semiconductors, Discrete Semiconductors, Bipolar Transistors, onsemi, MUN5212DW1T1G |
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