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| Item number:
2794E-1867160 Manufacturer no.:
FQT1N60CTF-WS EAN/GTIN:
n/a |
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| This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.0.2A, 600V, RDS(on) = 9.3Ω(Typ.) @VGS = 10 V, ID = 0.1A Low gate charge ( Typ. 4.8nC) Low Crss ( Typ. 3.5pF) Applications Lighting More information: | | Package Type: | SOT-223 | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 2.1 W | Transistor Configuration: | Single | Pin Count: | 3 + Tab | Number of Elements per Chip: | 1 | Dimensions: | 6.5 x 3.5 x 1.6mm | Maximum Operating Temperature: | +150 °C | Height: | 1.6mm | Length: | 6.5mm | Minimum Operating Temperature: | -55 °C | Width: | 3.5mm |
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| Other search terms: SMD transistor, SMD transistors, Transistor, Transistors, smd transistor, 1867160, Semiconductors, Discrete Semiconductors, Bipolar Transistors, onsemi, FQT1N60CTFWS |
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