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| Item number:
2794E-1857999 Manufacturer no.:
FGAF40S65AQ EAN/GTIN:
n/a |
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| Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.Maximum junction temperature : TJ = 175°C Positive temperaure co-efficient for easy parallel operating High current capability Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A High input impedance 100% of the Parts tested for ILM Fast switching Tightened parameter distribution IGBT with monolithic reverse conducting diode Applications Consumer Appliances PFC, Welder Industrial application More information: | | Maximum Continuous Collector Current: | 80 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 94 W | Number of Transistors: | 1 | Package Type: | TO-3PF | Mounting Type: | Through Hole | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single | Dimensions: | 15.7 x 5.7 x 24.7mm | Energy Rating: | 325mJ | Gate Capacitance: | 2590pF | Maximum Operating Temperature: | +175 °C | Minimum Operating Temperature: | -55 °C |
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| Other search terms: power transistor, 1857999, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, FGAF40S65AQ |
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