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onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount / 1857972


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Product information
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Item number:
     2794E-1857972
Manufacturer:
     onsemi
Manufacturer no.:
     AFGB40T65SQDN
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
SMD transistor
SMD transistors
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.VCE(sat) = 1.6 V (typ.) @ IC = 40 A Low VF soft recovery co-packaged diode For automotive Low conduction loss Low noise and conduction loss Applications Automotive On Board Charge Automotive DC/DC converter for HEV End Products EV/PHEV
More information:
Maximum Continuous Collector Current:
80 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
238 W
Number of Transistors:
1
Package Type:
D2PAK
Mounting Type:
Surface Mount
Channel Type:
N
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
10.67 x 9.65 x 4.58mm
Automotive Standard:
AEC-Q101
Energy Rating:
22.3mJ
Gate Capacitance:
2495pF
Maximum Operating Temperature:
+175 °C
Other search terms: Transistor, Transistors, smd transistor, 1857972, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, AFGB40T65SQDN
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2794 East Midlands NN17
800
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Prices: 2794 East Midlands NN17
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Minimum order quantity: 800 pieces ( £ 1,711.20* plus VAT )
Stock level: 2794 East Midlands NN17
Shipping: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
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