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| Item number:
2794E-1845019 Manufacturer no.:
FDMA2002NZ EAN/GTIN:
5059045347507 |
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| This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V RDS(ON) = 140 mΩ @ VGS = 3.0 V RDS(ON) = 163 mΩ @ VGS = 2.5 V Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm HBM ESD protection level=1.8kV (Note 3) Free from halogenated compounds and antimony oxides Applications This product is general usage and suitable for many different applications More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 2.9 A | Maximum Drain Source Voltage: | 30 V | Package Type: | WDFN | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Drain Source Resistance: | 268 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1.5V | Minimum Gate Threshold Voltage: | 0.4V | Maximum Power Dissipation: | 1.5 W | Maximum Gate Source Voltage: | ±12 V | Length: | 2mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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| Other search terms: 1845019, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDMA2002NZ |
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