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| Item number:
2794E-1844900 Manufacturer no.:
MJE210G EAN/GTIN:
5059045229018 |
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| The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.High DC Current Gain Low Collector-Emitter Saturation Voltage High Current-Gain - Bandwidth Product Annular Construction for Low Leakage These Devices are Pb-Free More information: | | Transistor Type: | PNP | Maximum DC Collector Current: | -10 A | Maximum Collector Emitter Voltage: | -40 V | Package Type: | TO-225 | Mounting Type: | Through Hole | Maximum Power Dissipation: | 15 W | Minimum DC Current Gain: | 45 | Transistor Configuration: | Single | Maximum Collector Base Voltage: | 25 V dc | Maximum Emitter Base Voltage: | 8 V dc | Maximum Operating Frequency: | 10 MHz | Pin Count: | 3 | Number of Elements per Chip: | 1 | Dimensions: | 7.8 x 3 x 11.1mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 1844900, Semiconductors, Discrete Semiconductors, Bipolar Transistors, onsemi, MJE210G |
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