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| Item number:
2794E-1844188 Manufacturer no.:
BDV64BG EAN/GTIN:
n/a |
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| The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.High DC Current Gain HFE = 1000 (min.) @ 5 Adc Monolithic Construction with Built-in Base Emitter Shunt Resistors These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices More information: | | Transistor Type: | PNP | Maximum DC Collector Current: | -10 A | Maximum Collector Emitter Voltage: | -100 V | Package Type: | TO-218 | Mounting Type: | Through Hole | Maximum Power Dissipation: | 125 W | Transistor Configuration: | Single | Maximum Collector Base Voltage: | 100 V dc | Maximum Emitter Base Voltage: | 5 V dc | Pin Count: | 3 | Number of Elements per Chip: | 1 | Dimensions: | 15.2 x 4.9 x 20.35mm | Maximum Operating Temperature: | +150 °C |
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