|  |
| |
| Item number:
2794E-1841157 Manufacturer no.:
NJL1302DG EAN/GTIN:
5059045653202 |
| |
|
| | |
| The Bipolar Power Transistor has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. It can also be used in other applications as a transistor die protection device.Thermally matched bias diode to eliminate thermal runaway Instant thermal bias tracking for superior sound quality Absolute Thermal Integrity High safe operating area Pb-Free Packages are Available Applications: High-fidelity consumer audio products Professional audio amplifiers More information: | | Transistor Type: | PNP | Maximum DC Collector Current: | -25 A | Maximum Collector Emitter Voltage: | -260 V | Package Type: | TO-264 | Mounting Type: | Through Hole | Maximum Power Dissipation: | 200 W | Transistor Configuration: | Single | Maximum Collector Base Voltage: | 260 V | Maximum Emitter Base Voltage: | 5 V | Maximum Operating Frequency: | 1 MHz | Pin Count: | 5 | Number of Elements per Chip: | 1 | Dimensions: | 20.01 x 5.18 x 26.11mm | Maximum Operating Temperature: | +150 °C |
|
| | |
| | | |
| Other search terms: 1841157, Semiconductors, Discrete Semiconductors, Bipolar Transistors, onsemi, NJL1302DG |
| | |
| |