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OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8 / 1837173


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Product information
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Item number:
     2794E-1837173
Manufacturer:
     OSI Optoelectronics
Manufacturer no.:
     OSD60-5T
EAN/GTIN:
     5059045196587
Search terms:
Photodiodes
Photodiode
Photo diode
photo diode
The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such AC applications as detection of pulsed LASER sources, LEDs, or chopped light.To achieve high speeds, these detectors should be reverse biased. Typical response times from 10 ns to 250 ns can be achieved with a 10V reverse bias, for example. When a reverse bias is applied, capacitance decreases (as seen in the figure below) corresponding directly to an increase in speed. As indicated in the specification table, the reverse bias should not exceed 30 volts. Higher bias voltages will result in permanent damage to the detector.Since a reverse bias generates additional dark current, the noise in the device will also increase with applied bias. For lower noise detectors, the Photovoltaic Series should be considered.High Speed Response Low Capacitance Low Dark Current Wide Dynamic Range High Responsivity APPLICATIONS Pulse Detectors Optical Communications Bar Code Readers Optical Remote Control Medical Equipment High Speed Photometry
More information:
Spectrum(s) Detected:
Infrared
Wavelength of Peak Sensitivity:
436nm
Package Type:
TO-8
Amplifier Function:
No
Mounting Type:
Through Hole
Number of Pins:
3
Diode Material:
Si
Minimum Wavelength Detected:
350nm
Maximum Wavelength Detected:
1100nm
Height:
0.17in
Diameter:
13.97mm
Peak Photo Sensitivity:
0.21A/W
Polarity:
Reverse
Series:
OSD
Typical Rise Time:
30µs
Other search terms: 1837173, Displays & Optoelectronics, Optocouplers & Photodetectors, OSI Optoelectronics, OSD605T
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