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DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole / 1827143


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Product information
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Item number:
     2794E-1827143
Manufacturer:
     Diodes
Manufacturer no.:
     DGTD120T25S1PT
EAN/GTIN:
     5059045296263
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
The DGTD120T25S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides low VCE(sat), excellent quality and high-switching performance.High Speed Switching & Low VCE(sat) Loss VCE(sat) = 2.0V @ IC = 25A High Input Impedance trr = 100ns (typ) @ diF/dt = 500A/μs Ultra-Soft, Fast Recovery Anti-parallel Diode Ultra Narrowed VF Distribution Control Positive Temperature Coefficient For Easy Parallelling Maximum Junction Temperature 175°C Lead-free finish Halogen and Antimony Free. “;Green”; Device Applications Motor Drive UPS Welder Solar Inverter IH Cooker
More information:
Maximum Continuous Collector Current:
50 A, 100 (Pulsed) A
Maximum Collector Emitter Voltage:
1200 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
348 W
Number of Transistors:
1
Package Type:
TO-247
Mounting Type:
Through Hole
Pin Count:
3
Transistor Configuration:
Single
Dimensions:
16.26 x 5.31 x 21.46mm
Gate Capacitance:
3942pF
Maximum Operating Temperature:
+175 °C
Minimum Operating Temperature:
-40 °C
Other search terms: Transistor, Transistors, power transistor, 1827143, Semiconductors, Discrete Semiconductors, IGBTs, DiodesZetex, DGTD120T25S1PT
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