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| Item number: 2794E-1811864 Manufacturer no.: FGH75T65SQDNL4 EAN/GTIN: n/a |
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| Maximum Continuous Collector Current = 200 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 375 W Package Type = TO-247 Mounting Type = Through Hole Channel Type = P Pin Count = 4 Switching Speed = 1MHz Transistor Configuration = Single Dimensions = 15.8 x 5.2 x 22.74mm Maximum Operating Temperature = +175 °C More information: | | Maximum Continuous Collector Current: | 200 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 375 W | Number of Transistors: | 1 | Package Type: | TO-247 | Mounting Type: | Through Hole | Channel Type: | P | Pin Count: | 4 | Switching Speed: | 1MHz | Transistor Configuration: | Single | Dimensions: | 15.8 x 5.2 x 22.74mm | Energy Rating: | 160mJ | Gate Capacitance: | 5100pF | Maximum Operating Temperature: | +175 °C |
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| Other search terms: power transistor, 1811864, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, FGH75T65SQDNL4 |
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