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| Item number:
2794E-1811859 Manufacturer no.:
FDP4D5N10C EAN/GTIN:
n/a |
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| Channel Type = N
Maximum Continuous Drain Current = 128 A
Maximum Drain Source Voltage = 100 V
Package Type = TO-220
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 4.5 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Power Dissipation = 150 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±20 V
Width = 4.67mm
Height = 15.21mm More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 128 A | Maximum Drain Source Voltage: | 100 V | Package Type: | TO-220 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 4.5 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 150 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 10.36mm | Maximum Operating Temperature: | +175 °C |
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| Other search terms: 1811859, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDP4D5N10C |
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