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| Item number:
2794E-1811858 Manufacturer no.:
FDP2D3N10C EAN/GTIN:
n/a |
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| This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A Power Density & Shielded Gate High Performance Trench Technology for Extremely Low RDS(on) High power density with Shielded gate technology Extremely Low Reverse Recovery Charge, Qrr Low Vds spike internal snubber function. Low Gate Charge, QG = 108nC (Typ.) Low switching loss High Power and Current Handling Capability Low Qrr/Trr Soft recovery performance Good EMI performance Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies. Motor drives and Uninterruptible Power Supplies Micro Solar Inverter Server Telecom Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.) Motor Drive Uninterruptible Power Supplies More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 222 A | Maximum Drain Source Voltage: | 100 V | Package Type: | TO-220 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 2.3 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 214 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 10.36mm | Maximum Operating Temperature: | +175 °C |
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| Other search terms: 1811858, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDP2D3N10C |
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