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| Item number:
2794E-1811599 Manufacturer no.:
FM25V20A-DGQ EAN/GTIN:
5059045712800 |
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| 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K x 8 High-endurance 10 trillion (1014) read/writes 121-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Up to 33 MHz frequency Direct hardware replacement for serial flash and EEPROM Supports SPI mode 0 (0, 0) and mode 3 (1, 1) Sophisticated write protection scheme Hardware protection using the Write Protect (WP) pin Software protection using Write Disable instruction Software block protection for 1/4, 1/2, or entire array Device ID Manufacturer ID and Product ID Low power consumption 3 mA active current at 33 MHz 400 A standby current 12 A sleep mode current Low-voltage operation: VDD = 2.0 V to 3.6 V Extended temperature: –40 °C to +105 °C 8-pin thin dual flat no leads (DFN) package More information: | | Memory Size: | 2Mbit | Organisation: | 256 kB x 8 | Interface Type: | Serial-SPI | Data Bus Width: | 8bit | Maximum Random Access Time: | 11ns | Mounting Type: | Surface Mount | Package Type: | DFN | Pin Count: | 8 | Dimensions: | 6 x 5 x 0.7mm | Length: | 5mm | Maximum Operating Supply Voltage: | 3.6 V | Width: | 6mm | Height: | 0.7mm | Maximum Operating Temperature: | +105 °C | Minimum Operating Supply Voltage: | 2 V |
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| Other search terms: eeprom memory, 1811599, Semiconductors, Memory Chips, FRAM Memory, Infineon, FM25V20ADGQ |
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