| |
|
| Item number: 2794E-1791002 Manufacturer no.: PBSS4120T,215 EAN/GTIN: n/a |
| |
|
| | |
| Low Saturation Voltage NPN Transistors. A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. More information: | | Transistor Type: | NPN | Maximum DC Collector Current: | 1 A | Maximum Collector Emitter Voltage: | 20 V | Package Type: | SOT-23 (TO-236AB) | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 480 mW | Minimum DC Current Gain: | 350 | Transistor Configuration: | Single | Maximum Collector Base Voltage: | 30 V | Maximum Emitter Base Voltage: | 5 V | Maximum Operating Frequency: | 100 MHz | Pin Count: | 3 | Number of Elements per Chip: | 1 | Dimensions: | 1 x 3 x 1.4mm | Maximum Operating Temperature: | +150 °C |
|
| | |
| | | |
| | | |
| |