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| Item number:
2794E-1784505 Manufacturer no.:
NTMFS08N003C EAN/GTIN:
5059045291503 |
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| This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.Features Shielded Gate MOSFET Technology Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 56A Max rDS(on) = 8.1 mΩ at VGS = 6 V, ID = 28 A 50% Lower Qrr than Other MOSFET Suppliers Lowers Switching Noise/EMI MSL1 Robust Package Design Applications Primary DC−DC MOSFET Synchronous Rectifier in DC−DC and AC−DC Motor Drives Solar Inverters Load switches End Products Power adaptors DC to DC power supplies Power Tools Drones Battery packs More information: | | Channel Type: | N | Maximum Continuous Drain Current: | 147 A | Maximum Drain Source Voltage: | 80 V | Package Type: | PQFN8 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 3.1 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 125 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 5mm | Maximum Operating Temperature: | +150 °C |
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| Other search terms: 1784505, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NTMFS08N003C |
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