Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.Maximum Junction Temperature: TJ =175°C Positive Temperature Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A High Input Impedance Fast Switching Tighten Parameter Distribution Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC More information:  | | Maximum Continuous Collector Current: | 60 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±30V | Maximum Power Dissipation: | 333 W | Number of Transistors: | 1 | Package Type: | TO-247 G03 | Mounting Type: | Through Hole | Channel Type: | P | Pin Count: | 3 | Transistor Configuration: | Single | Dimensions: | 15.87 x 4.82 x 20.82mm | Energy Rating: | 50mJ | Gate Capacitance: | 3813pF | Maximum Operating Temperature: | +175 °C | Minimum Operating Temperature: | -55 °C |
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