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N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3 / 1783877


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Product information
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Item number:
     2794E-1783877
Manufacturer:
     Vishay
Manufacturer no.:
     SQ2364EES-T1_GE3
EAN/GTIN:
     5059045288886
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Channel Type = N
Maximum Continuous Drain Current = 2 A
Maximum Drain Source Voltage = 60 V
Series = TrenchFET
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 600 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 0.46V
Minimum Gate Threshold Voltage = 1V
Maximum Power Dissipation = 3 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±8 V
Number of Elements per Chip = 1mm
Minimum Operating Temperature = -55 °CV
More information:
Channel Type:
N
Maximum Continuous Drain Current:
2 A
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-23
Series:
TrenchFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
600 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
0.46V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
3 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±8 V
Length:
3.04mm
Other search terms: 1783877, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay Siliconix, SQ2364EEST1_GE3
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Price is valid from 40 packets
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