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| Item number: 2794E-1783663 Manufacturer no.: Si2319DDS-T1-GE3 EAN/GTIN: n/a |
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| TrenchFET® Gen III p-channel power MOSFET More information: | | Channel Type: | P | Maximum Continuous Drain Current: | 3.6 A | Maximum Drain Source Voltage: | 40 V | Package Type: | SOT-23 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 100 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 1.7 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 3.04mm |
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| Other search terms: 1783663, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay Siliconix, Si2319DDST1GE3 |
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