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P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3 / 1783663


Quantity:  piece  
Product information
Product Image
Product Image
Item number:
     2794E-1783663
Manufacturer:
     Vishay
Manufacturer no.:
     Si2319DDS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
TrenchFET® Gen III p-channel power MOSFET
More information:
Channel Type:
P
Maximum Continuous Drain Current:
3.6 A
Maximum Drain Source Voltage:
40 V
Package Type:
SOT-23
Series:
TrenchFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
100 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.5V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
1.7 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±20 V
Length:
3.04mm
Other search terms: 1783663, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay Siliconix, Si2319DDST1GE3
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2794 East Midlands NN17
3000
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Prices: 2794 East Midlands NN17
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Minimum order quantity: 3000 pieces ( £ 357.00* plus VAT )
Stock level: 2794 East Midlands NN17
Shipping: 2794 East Midlands NN17
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Rights to return this item: 2794 East Midlands NN17
Period of time:On the first day
Condition of packaging:Original packaging opened, but not damaged
Condition of goods:Unused
Return costs:Paid by supplier
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